Advanced Mask Process Modeling for 45-nm and 32-nm Nodes
Model-Based Mask Process Correction and Verification for Advanced Process Nodes
Residual errors in photomasks have triggered development work for correcting mask manufacturing effects. Long range and short range effects contribute to the observed signatures. The dominating error source...
Model Based Mask Process Correction and Verification for Advanced Process Nodes
The extension of optical lithography at 193nm wavelength to the 32nm node and beyond drives advanced resolution enhancement techniques that impose even tighter tolerance requirements on wafer lithography...
Fastest Time-to-Mask With The Calibre Platform
Fastest Time-to-Mask With The Calibre Platform.