Model-Based Mask Process Correction and Verification for Advanced Process Nodes
Advanced Mask Process Modeling for 45-nm and 32-nm Nodes
As tolerance requirements for the lithography process continue to shrink with each new technology node, the contributions of all process sequence steps to the critical dimension error budgets are being...
Model Based Mask Process Correction and Verification for Advanced Process Nodes
The extension of optical lithography at 193nm wavelength to the 32nm node and beyond drives advanced resolution enhancement techniques that impose even tighter tolerance requirements on wafer lithography...