Model-Based Mask Process Correction and Verification for Advanced Process Nodes
White Paper
ABSTRACT
Residual errors in photomasks have triggered development work for correcting mask manufacturing effects. Long range and short range effects contribute to the observed signatures. The dominating error source is the etch process and hence it was captured with a variable etch bias model in the past. The paper will discuss limitations and extensions to the approach for improved accuracy. The insertion of MPC into a post tapeout flow imposes strict requirements for runtime and data integrity. The paper describes a comprehensive approach for MPC including calibration and model building, model verification, mask data correction and mask data verification.
Related Resources
Advanced Mask Process Modeling for 45-nm and 32-nm...
White PaperAdvanced Mask Process Modeling for 45-nm and 32-nm Nodes
As tolerance requirements for the lithography process continue to shrink with each new technology node, the contributions of all process sequence steps to the critical dimension error budgets are being...
Model Based Mask Process Correction and Verification...
White PaperModel Based Mask Process Correction and Verification for Advanced Process Nodes
The extension of optical lithography at 193nm wavelength to the 32nm node and beyond drives advanced resolution enhancement techniques that impose even tighter tolerance requirements on wafer lithography...
