Roadmap to sub-nanometer OPC model accuracy
White Paper
ABSTRACT
OPC models describe the entire patterning process, including photomask, optics, resist, and etch as a set of separately characterized modules. It is difficult, however, to definitively calibrate the optics model because the aerial image is not easily measurable. There are a number of methods of calibrating photomask, optical, and resist, and etch parameters. This paper will systematically explore the impact of all components in the photomask and optical models, and will provide a pathway to sub-nanometer accuracy required for 20 nm technology.
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