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Model-Based Double-Dipole Lithography for Sub-30-nm...

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Model-Based Double-Dipole Lithography for Sub-30-nm Node Device

As the optical lithography advances into the sub-30nm technology node, the various candidates of lithography have been discussed. Double dipole lithography (DDL) has been a primary lithography candidate...

DO-254

Abstract

Model-Based Double-Dipole Lithography for Sub-30-nm Node Device

TAGS: DO-254

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Computational Lithography: Enabling 12 Technology...

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Computational Lithography: Enabling 12 Technology Nodes in 12 years

Computational lithography has become an integral part of design since the 130 nm process node. New techniques continue to be developed to extend the steady node shrink year after year.

DO-254

Abstract

Computational Lithography: Enabling 12 Technology Nodes in 12 years

Computational lithography has become an integral part of design since the 130 nm process node. New techniques continue to be developed to extend the steady node shrink year after year.

TAGS: DO-254

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Deployment of OASIS in the Semiconductor Industry...

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Deployment of OASIS in the Semiconductor Industry – Status, Dependencies and Outlook

The OASIS working group was first initiated in 2001, published the new format in March 2004, which was ratified as an official SEMI standard in September 2005. A follow-on initiative expanded the new standard...

GDSII, MEBES, OASIS, Semiconductor

Abstract

Deployment of OASIS in the Semiconductor Industry – Status, Dependencies and Outlook

TAGS: GDSII, MEBES, OASIS, Semiconductor

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Impact of Illumination on Model-Based SRAF Placement...

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Impact of Illumination on Model-Based SRAF Placement for Contact Patterning

Sub-Resolution Assist Features (SRAFs) have been used extensively to improve the process latitude for isolated and semi-isolated features in conjunction with off-axis illumination. These SRAFs have typically...

Illumination, SRAF

Abstract

Impact of Illumination on Model-Based SRAF Placement for Contact Patterning

TAGS: Illumination, SRAF

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Automation of Sample Plan Creation for Process Model...

White Paper

Automation of Sample Plan Creation for Process Model Calibration

The process of preparing a sample plan for optical and resist model calibration has always been tedious. Not only because it is required to accurately represent full chip designs with countless combinations...

Abstract

Automation of Sample Plan Creation for Process Model Calibration

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Demonstrating the Benefits of Source-Mask Optimization...

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Demonstrating the Benefits of Source-Mask Optimization and Enabling Technologies through Experiment and Simulations

In recent years the potential of Source-Mask Optimization (SMO) as an enabling technology for 22nm-and-beyond lithography has been explored and documented in the literature.1-5 It has been shown that intensive...

RET, SMO

Abstract

Demonstrating the Benefits of Source-Mask Optimization and Enabling Technologies through Experiment and Simulations

TAGS: RET, SMO

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Study of Model Based Etch Bias Retarget for OPC

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Study of Model Based Etch Bias Retarget for OPC

Model based Optical proximity correction is usually used to compensate for the pattern distortion during the microlithography process. Currently, almost all the lithography effects, such as the proximity...

Model, OPC, RET

Abstract

Study of Model Based Etch Bias Retarget for OPC

TAGS: Model, OPC, RET

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Patterning Process Models Presentation

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Patterning Process Models Presentation

This presentation reviews the steady improvement in the predictive power and runtime performance of the patterning models used in full chip simulation tools down to 14 nm node, as well as the factors that...

Abstract

Patterning Process Models Presentation

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Challenges for Patterning Process Models Applied...

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Challenges for Patterning Process Models Applied to Large Scale

Full-chip patterning simulation has been a key enabler for multiple technology generations, from 130 nm to the emerging 14 nm node. This span has featured two wavelength changes, a progression of optical...

Abstract

Challenges for Patterning Process Models Applied to Large Scale

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