Sign In
Forgot Password?
Sign In | | Create Account

IC Design Blog

29 Sep, 2013

Marrying More Than Moore Technologies

Posted by Shelly Stalnaker

Shelly Stalnaker Marrying More Than Moore Technologies The IC industry will undergo significant changes as future growth is driven not just by traditional Moore’s Law scaling, but also by “More Than Moore” technologies, including 3D-IC, MEMS, and silicon photonics. This panel discusses the exciting opportunities and challenges ahead. Panelists John Ferguson, Director of Marketing, Calibre DRC Applications, … Read More

27 Sep, 2013

Shelly Stalnaker Achieving IC Reliability in High Growth Markets Several high-growth IC markets are experiencing demand for higher reliability, including mobile/wireless, automotive, industrial control, and medical. At the same time, factors such as thinner gate oxide and multiple power rails have the potential to introduce new failure mechanisms. This panel discusses the demand for IC reliability, what design methodologies … Read More

25 Sep, 2013

Shelly Stalnaker Technical Article Just when you thought you were getting used to double patterning requirements and processes, multi-patterning is now a reality. While the additional MP requirements at 16/14 nm weren't readily visible to the designer, anyone moving to the 10 nm process node will probably need some additional multi-patterning education. The 10 nm node introduces at least two new multi-patterning … Read More

23 Sep, 2013

Multi-Patterning Unmasked!!

Posted by Shelly Stalnaker

Shelly Stalnaker Expert’s Corner David Abercrombie, DFM Program Manager for Calibre, is an expert at detailing the multifaceted impacts of multi-patterning on advanced node design and verification. For designers struggling to understand the complexity and nuances of multi-patterning, his articles provide a well-lit roadmap that enables them to not only comprehend how multi-patterning will change the design process, … Read More

23 Jul, 2013

What’s in a Name: Signal

Posted by Martin Vlach

Martin Vlach It’s all about communication. When I talk to people in the EDA community, we often bandy words around in the comfort that we all know what they mean — and that they mean the same thing to each of us. But do they? You know — what’s a model? A system? Tomato? Tomahto? I have been thinking a lot lately about hardware description languages — VHDL, VHDL-AMS, Verilog-AMS, SystemVerilog — and how we use words … Read More

wreal, analog signal, connect module, analog abstraction, event-driven model, real number model, digital abstraction, digital signal

5 Apr, 2013

The Secrets of 14nm Lithography

Posted by Gene Forte

Gene Forte Optical lithography is not dead yet! 193nm immersion lithography will be used for the 20/22nm node, and with the continued delay of EUV, is now the plan of record for 14nm. Gandharv Bhatara explains how new OPC technology solves both the CD and turn-around time at very the edges of advanced node manufacturability. Read More … Read More

SRAF, RET, 20nm, 22 nm, 14nm, manufacturability, OPC, Foundry, Lithography

19 Mar, 2013

A New World for Fill at N20

Posted by admin

admin There are many major changes required to design, verify, and manufacture semiconductors at the 20nm process node (N20). One of these is fill. At previous design nodes, fill was used just to ensure manufacturability by giving each layer (metal, poly, diffusion) an accepted density. At N20, fill is used to address many more manufacturing issues, and has become highly complex. Read More … Read More

fill, 20nm, litho, N20

7 Dec, 2012

Battle of Fins and BOXes

Posted by Arvind Narayanan

Arvind Narayanan Do FDSOI and FinFET provide better performance and better power than bulk? Will FDSOI at 20nm bridge the 16nm finFET gap? Does finFET offer better cost benefits than FDSOI?  Does shamwow actually hold 20 times its weight in liquid? While the last claim is questionable, the jury is not out yet on the FDSOI vs. FinFET war. Proponents of both these technologies claim significant power and performance benefits … Read More

FD-SOI, fin grid, dual gate, MugFET, Tri-gate, FinFET, full depleted SOI

5 Mar, 2012

TSMC 28nm yield (SemiWiki)

Posted by Simon Favre

Simon Favre I posted the following reply to Daniel Nenni’s article on TSMC 28nm yield: “I agree that design teams need to take more ownership of the yield issue. Unfortunately, yield is such a sensitive topic that people only talk about it when it’s bad! The defect density vs. die size and yield curves above represent the simplest area-based yield model, based on an average across many designs, … Read More

CAA, TSMC, 28nm

11 May, 2011

DAC 2011 is upon us!

Posted by Simon Favre

Simon Favre Here we go again, that wonderful time of year. No, not Christmas, DAC! Now is the time of year when all the EDA vendors are scurrying about finishing whatever it is they plan on doing at DAC. Since the business climate seems to be improving, it would be nice to see an increase in attendance. I like San Diego, I think it’s a great place to have DAC. Some think DAC is going the way of the Dodo, … Read More

11 Apr, 2011

Mentor Graphics User to User (U2U)

Posted by John Ferguson

John Ferguson

Hello all, Just a friendly reminder, the Mentor Graphics User Group Meeting is just around the corner. It is scheduled for April 26th in Santa Clara, CA at the Santa Clara Marriott. If you are a Calibre user, this is your chance to get free access to information on Calibre’s and our roadmap as well as attend sessions on Mentor Graphics solutions in P&R, PCB, Custom IC design, and Test &

Read More

10 Feb, 2011

Matthew Hogan Designers are discovering a new class of design errors that is difficult to check using more traditional methods, and can potentially affect a wide range of IC designs, especially where high reliability is a must. There errors require electrical rule checking to complement the tradition layout checks. Electrical rules are relatively complex, non-standard, and growing in number and type, creating a need … Read More

Low Power, PERC, ERC, thin oxide, Verification

22 Jan, 2011

Dawn at the OASIS

Posted by Joe Davis

Joe Davis Almost 10 years ago, as the industry was starting to adopt model-based OPC and other resolution enhancing techniques on a large scale, the ITRS got out its looking glass and saw an “explosion” in the size of the files used to describe chip layouts. As a result, a group of industry companies collaborated to create a SEMI spec for the OASIS format for layout data. The format was officially … Read More

diffusion of innovation, GDSII, Adoption, RET, tape-out, OASIS, OPC

29 Nov, 2010

Layout Density and the Analog Cell

Posted by John Ferguson

John Ferguson Density and the Analog Cell Analog design is a very sensitive business. Unlike the digital world, where circuits are on or off, and have built in hysteresis to prevent inadvertent toggling, analog circuitry is intentionally designed to respond to minor fluctuations in the signal. As a result, analog layout is riskier than digital. To prevent race conditions, or minor (yet potentially catastrophic) … Read More

density, DRC, analog, layout

20 Aug, 2010

Effects of Inception

Posted by Arvind Narayanan

Arvind Narayanan For those of you who were wondering if I had fallen off the face of the planet, the answer is no. My mind was stuck in a limbo when I got hurt in an extraction (not the parasitic kind) mission. Confused? Read on… I finally got to watch the critically acclaimed sci-fi movie Inception last weekend and life has never been the same again. Without giving away too much detail for the benefit of those who … Read More

Donut Domains, Multi-Voltage Flow, always-on, UPF

Archives

 
Online Chat