Mentor Graphics and X-FAB Semiconductor Foundries Jointly Offer a Series fo Technology Design Kits

Mentor is proud to team up with X-FAB to offer a series of analog/mixed-signal (AMS) design kits. These kits contain comprehensive and proven sets of building blocks at both the device and logical cell or block level that enable semiconductor companies and electronic systems manufacturers to jump-start their design cycles using X-FAB's foundry process and Mentor's AMS IC flow together. This reduces time-to-market and ensures the manufacturing success of analog, RF and mixed-signal ICs, and systems on chip (SoCs).

Mentor-X-FAB TDKs not only offer the necessary design building blocks, but also capture the essence of a tightly-integrated set of Mentor tools to provide a complete, end-to-end solution for design capture (schematic or netlist), functional verification, physical layout (floor planning, placement and routing), physical verification (DRC and LVS), parasitic extraction and post-layout verification (parasitic back-annotation to the schematic, and simulation).

Mentor-XFAB TDKs not only offer the necessary design building blocks, but also capture the essence of a tightly-integrated set of Mentor tools to provide a complete, end-to-end solution for design capture (schematic or netlist), functional verification, physical layout (floorplanning, placement and routing), physical verification (DRC and LVS), parasitic extraction and post-layout verification (parasitic back-annotation to the schematic, and simulation).

X-FAB Online

TDK Offerings:

X-FAB's AMS CMOS technologies XC06, XC035, and XC035LV, as well as its BiCMOS technology XB06 are set up in a modular way, offering maximum flexibility and cost-effectiveness while enabling designers to select only those process options that match their application needs. XC06 is a two or three metal layer 0.6 µm 5.0V CMOS process with 17 modular options, including medium and high voltage MOS transistors, passive elements and embedded EEPROM and Flash blocks. XC035 and XC035LV are three or four metal layer 0.35 µm 3.3V CMOS processes with double poly and high resistivity modules. XC035 also offers 5V capability with a single or double gate option, while XC035LV, which adds a non-volatile EEPROM module and a Schottky diode module, is capable of operating voltages down to 1.0V. XB06 is the two or three metal layer 0.6 µm 3.3V/5.0V BiCMOS process with double poly, double metal N-well process

XC06 –

N-well CMOS process with 15 very flexible combinable modules available, such as high voltage, extended high voltage, embedded EEPROM and Flash.

• 0.6 µm single poly, double metal N-well CMOS basic process
• Triple metal option for high-density circuits
• Different medium and high-voltage options with 8 to 40V DC operating conditions for NMOS and PMOS transistors
• Extended high-voltage modules with ≥ 60V DC operating conditions - NMOS, PMOS and DMOS for 42V board net automotive application
• Triple-well-isolated CMOS transistors
• Different bipolar transistors
• Double poly-Si capacitor Linear poly capacitor module High-resistive poly-Si resistor High precision BSIM3V3 SPICE models for CMOS and Gummel Poon model for bipolars Excellent analog performance with accurate device matching 

XC035 –

State-of-the-art 0.3 5µm 3.3V CMOS process with 5V module and additional optional features for mixed-signal applications.

• 3.3V logic layout and performance compatible with the industry standard
• 0.35 µm single poly, triple metal N-well CMOS basic process
• 3.3V core, 5V tolerant I/Os
• Silicided source and drain
• 5V NMOS / PMOS module (with 18V LDMOS)
• Double poly module for poly-poly capacitors
• Four layer metal options for high-density circuits with up to 18,000 gates per mm²
• High-value polysilicon resistor module
• Typical and worst-case models - BSIM3v3.1 (MOS, BJT, RES, CAP) 

XC035LV –

Mixed-signal, low-voltage 0.35 µm CMOS process with embedded non-volatile memory and optional features.

• 3.3V logic layout and performance compatible with the industry standard
• 0.35 µm double poly, triple metal N-well CMOS basic process
• Silicided source and drain
• <1V and 3.3V core, 5V tolerant I/O
• Double poly capacitor
• High-voltage transistors to support EEPROM programming
• Four-layer metal options for high-density circuits with up to 18,000 gates per mm²
• Additional optional components: floating gate EEPROM and Schottky diodes
• Typical and worst-case models - BSIM3v3.1 (MOS, BJT, RES, CAP)
• MOS 1/f noise characterized and included in model

XB06 -

0.6 µm BiCMOS technology for RF circuits and high precision analog applications mixed with standard digital parts in CMOS.

• 0.6 µm double poly, double metal N-well CMOS process
• High-frequency npn transistor with poly emitter and buried collector
• Large number of bipolar primitive devices; well-adjusted for most typical requirements
• Double poly capacitor module with high capacity per area
• High-resistive poly resistor module
• High-precision BSIM3V3 SPICE models for CMOS and Gummel Poon model for bipolar
• Excellent analog performance with accurate device matching
• Three digital core cell libraries optimized for most typical applications
• 2,000 to 2,500 effective gates per mm²
• Typical gate delays (digital) of 160 ps
• 5V and 3.3V I/O cell libraries
• IEEE 1149.1 boundary scan macros
• Electrostatic discharge (ESD) protection in accordance with MIL-STD
• High-density RAM, DPRAM. ROM blocks
• OTP options: zener-zaps
• Development kits for major EDA tools

Also, recently added XFAB kits are: CX06, XC035HV.

To access available XFAB design kits, please contact your local XFAB representatives.

TDK Components:

You will receive a self-extracting tar file containing:

• Design Architect-IC symbols with predefined properties for Eldo simulation and SDL and LVS
• Userware to customize the library palettes listing the available components
• Userware, process definition file (PDF), layout and device generators as required for each component
• Open source code on all components of the design kit, so customers have the flexibility to further extend or customize the kit
• Cell library includes analog or digital logic cells as applicable. Please contact XFAB for release details.

TDK Documentation:

• Release_notes - Unique requirements for the specific design kit and revision history. This file documents which specific Eldo models and DRC/LVS files were used to validate the design kit.
• Installation_Guide - Brief description of design kit contents and installation procedure
• Library_Specification.pdf - List of components included in the design kit describing the menu name and associated model names and properties.
• Users_Guide.pdf - Users guide and tutorial.

Software Tool Requirements:

• Design Architect-IC (IC Flow 2001.2) version 8.9_4.1 or greater. (To check the version, enter the da_ic -ver command.)
• Eldo version 5.5_1.1 or greater (To check the version, enter the $anacad/bin/eldo - rel command.)
• ICgraph version (IC Flow 2001.2) 8.9_3.1 or greater (To check the version, enter the ic -ver command.)

Support:

X-FAB provides direct support for the Mentor IC flow design kits; Click here for X-FAB contact information for customer support. Mentor Graphics customer support is available to answer any tool related issues. Click here for contact information for Mentor Graphics customer support.