Mentor Graphics Pioneers New DFM Technology by Leveraging Calibre Design-to-Silicon Platform
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WILSONVILLE, Ore., October 19, 2004 - Mentor Graphics Corporation (Nasdaq: MENT) today announced additional functionality for the Calibre® design-to silicon platform in the form of Calibre Transition, Measure and Analyze to address critical design for manufacturing (DFM) requirements. Mentor also outlined its long-term roadmap for future Calibre DFM tools, which will allow users to consider and optimize for manufacturing at various stages in the design flow: design, verification and analysis, tapeout and test. The Calibre design-to-silicon platform is a comprehensive set of tools addressing the complex handoff between design and manufacturing. The cornerstone of the Calibre design-to-silicon platform is a single, robust hierarchical data processing engine that allows for the essential interaction and data sharing required between all tools in the platform. "Design for manufacturing is nothing new, but the degree to which nanometer technologies have created additional yield considerations is unprecedented," said Joe Sawicki, vice president and general manager, design-to-silicon division, Mentor Graphics. "Over the last several years, manufacturing for design, primarily resolution enhancement technology, has been the key to ensuring yield. Now, achieving yield is requiring the EDA industry to pioneer new technology, make significant changes to existing tools, and provide a more robust communication link between design and manufacturing." Extending the Calibre Design-to-Silicon Platform for DFM Calibre Design-to-Silicon Platform DFM Roadmap Technology Trends Because yield issues accelerate with each new process node, the time required to bring a new process to acceptable yield levels has increased. Before designing and adopting a DFM methodology, it is important to understand the types of yield defects and the impact each has on correction and analysis methods in development at manufacturers. These defect areas include random (typically associated with particle defects), systemic (induced by the process or lithography applications) and parametric (which cause timing or other failures as a result of device physics and interconnect effects). Yield that is limited by defects, although still at issue, has been supplanted by yield limited by features; that is, the failure to form features due to shrinking geometries. At the 65nm node, it will be even more important to take a holistic approach to DFM, especially in terms of understanding the inherent characteristics in the manufacturing process, and articulating that knowledge in tools, both upstream to design and downstream to test. Like traditional design rule checking (DRC), at 90nm and 65nm, DFM becomes, to a large extent, a full-chip problem: data must be made available in its full context. This means having access to DFM yield-limiting issues in a cross-layer and cross-hierarchical sense. It may be possible to improve the manufacturability of one layer by manipulating another. Similarly, a cell with no known manufacturability issues may significantly impact the manufacturability of a full-chip when placed into context.
Mentor Graphics and Calibre are registered trademarks of Mentor Graphics Corporation. All other company or product names are the registered trademarks or trademarks of their respective owners. ###
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