A Case Study: Critical Area and Critical Feature Analysis of Production 90nm Designs at LSI Corporation
White Paper
ABSTRACT
This paper documents the results of a critical area and critical feature analysis study of four LSI production 90 nm designs. The recommended rule adherence and statistical sensitivity to random particle defects were evaluated and used to prioritize the yield issues of IP, memories and routing within the various products. Automated correction of recommended rule violations was run in the logic routing to quantify the amount of optimization possible without re-routing the chips. Comparisons were done between the chips to identify commonalities and differences in different design implementations
Related Resources
High Performance Electrical Driven Hotspot Detection Solution for Full Chip Design using a Novel Device Parameter Matching Technique
With the continuous development of today’s technology, IC design becomes a more complex process. The designer now not only takes care of the normal design and layout parameters as usual, but also...
Automated Yield Enhancements Implementation on full 28nm Chip: Challenges and Statistics
This paper shares the details of the Yield Enhancements that were done at 28nm full chip level sharing the complexity involved in implementing such a flow and then the verification challenges involved ,...
Smart Double-Cut Via Insertion Flow With Dynamic Design-Rules Compliance For Fast New Technology Adoption
As IC technologies shrink and via defects remain the same size, the probability of via defects increases. Redundant via insertion is an effective method to reduce yield loss related to via failures, but...