White Papers
Reducing Physical Verification Cycle Time
Sign-off for IC tape-out has undergone dramatic changes over the past several years. The size and complexity of nanometer IC design and the volume of geometric content for related layouts all skyrocketed. Additionally, extensive changes occurred in the processing requirements for nanometer design processes. Physical impacts that we once could ignore now have measurable electrical effects.
As a result, ensuring that the original design intent is maintained is increasingly difficult. Identifying these new defect mechanisms puts a new burden on physical verification runtimes. Worse still, due to the complexity of these effects, debugging a problem through layout modifications without generating some new problem is more challenging, requiring more verification iterations than ever before. Given these impacts, the time required to iterate from design to a physically- and electrically-clean layout in these designs can rapidly overrun production schedules and delivery dates.
Clearly, new verification strategies are needed. All aspects of the physical verification cycle, from physical verification run times to the time required to identify, understand and debug design violations, must be re-evaluated. Engineers must be able to identify new complex physical interactions and characterize all physical, topological and electrical failure mechanisms associated with new process. Maintaining real-world production schedules, however, means increasing the number of iterations required to validate fixes while decreasing the total runtimes for each component. Design violations must be presented as clearly and efficiently as possible, to reduce debugging time, and approaches that reduce the time required to re-verify the impact of changes to a design must be implemented.
Calibre provides the most comprehensive and forward-looking functionality for performing DRC, LVS and DFM simulations. Through hyperscaling technology and the ability to utilize specialized cell processor architecture, Calibre ensures the fastest possible runtimes. The advanced debugging features of Calibre RVE presents all failure mechanisms to the user in a simple interface, directly within the engineer's design environment. With incremental verification and debug, Calibre lets engineers validate the impacts of design modifications without waiting for DRC runs to complete. Together, these capabilities offer the ability to dramatically reduce the total physical verification cycle time.
More White Papers
Analyzing the Device Parasitics Sensitivity and Accuracy of Calibre xACT 3D Field Solver Extraction
As process technologies advance, a parasitic extraction tool requires more sophisticated extraction capability to obtain the effective sensitivity analysis users need, while still meeting schedules and accuracy specifications. Mentor’s new parasitic extraction tool, Calibre® xACT 3D, enabled the Semiconductor Technology Academic Research Center (STARC) to easily and accurately extract the capacitance adjacent to a device on an individual component basis, and create a new reference based on the extraction. With its unique technology and high-quality performance, Calibre xACT 3D can be an integral part of the sophisticated extraction flow needed for today’s complex designs and advanced process technologies.
Describing PERC-based Intent Driven Design
In this paper, we present a fully automated CAD solution that captures the designer’s intent from the schematic netlist, and links these annotations to the proper devices or nets on the physical layout level.
Advanced Memory Cell Characterization with Calibre xACT 3D
Memory designers need to increase bit density to meet exacting specifications for fast data transfer and low power consumption. Higher density increases the interactions between interconnect and devices, yet they have to design with real design margins. Accurate characterization is required at every step of memory design. Memory designers need a tool that can help them analyze parasitic issues accurately and quickly at every stage of the physical design cycle, as well as design cutting-edge memories from basic building blocks to the full chip. Using Calibre xACT 3D at all stages of memory design, from bit cell design to full chip sign-off, ensures a robust design that will work to specification when it is manufactured.
Calibre RealTime: Placing Signoff Verification into the Custom Designer's Hands
Learn how you can reduce custom/AMS design cycle time while improving design quality with on-demand, in-design, signoff-quality verification from Calibre RealTime!
Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs
This paper introduces the first comprehensive and accurate compact resistance-inductance-capacitance-conductance (RLCG) model for through-silicon vias (TSVs) in 3-D ICs valid from low- to high-frequency regimes, with consideration of the MOS effect in silicon, the alternating-current (ac) conduction in silicon, the skin effect in TSV metal, and the eddy currents in the silicon substrate. The model is verified against electrostatic measurements as well as a commercial full-wave electromagnetic simulation tool and subsequently employed for various performance (delay) analyses. The compact model is also applicable to TSVs made of carbon nanotube (CNT) bundles, once a slight modification (making the effective conductivity complex) is made. Various geometries (as per the International Technology Roadmap for Semiconductors) and prospective materials (Cu, W, and single-walled/multiwalled CNTs) are evaluated, and a comparative performance analysis is presented. It is shown that CNT-bundle-based TSVs can offer smaller or comparable high-frequency resistance than those of other materials due to the reduced skin effect in CNT bundle structures. On the other hand, the performance (delay) analysis indicates that the performance differences among different TSV materials are rather small. However, it is shown that CNTs provide an improved heat dissipation path due to their much higher thermal conductivity. In addition, the improved mechanical robustness and thermal stability of CNTs also favor their selection as TSV materials in emerging 3-D ICs.
Advanced Manufacturing Closure with Calibre® InRoute and Olympus-SoC
Achieving manufacturing signoff is getting more difficult at each node as we encounter significant manufacturing limitations and variability. This paper describes the physical signoff challenges seen in advanced node designs. It then demonstrates how the Calibre InRoute platform provides faster and more reliable DRC/DFM signoff by using the Calibre verification and DFM platform to drive routing and optimization within the Olympus-SoC place and route environment.
Calibre Pattern Matching: Picture It, Match It...Done!
Calibre Pattern Matching is an extension to SVRF that simplifies complex rule checks required for advanced IC processes. This white paper discusses the conditions that have created the need for pattern matching techniques, the identification and creation of patterns, the Calibre Pattern Matching process, and the benefits derived from its use.
Calibre xACT 3D — No Compromise Extraction For Advanced Transistor Level Design
Calibre® xACT 3D—a new product designed to provide the reference-level accuracy of a 3D field solver coupled with fast performance and high scalability. Calibre xACT 3D leverages its integration into the established best-in-class production design sign-off flow with Calibre LVS and its device and interconnect modeling infrastructure for maximum usability. This paper details how the Calibre xACT 3D extraction solution addresses the extraction challenges for design signoff at advanced nodes.
Automated DRC Violation Waiver Management for IP Block Integration
As part of the intellectual property (IP) design process, the IP vendor and the foundry negotiate the “waiver” of certain design rule checking (DRC) errors for the process to which the rule deck is targeted. However, when the IP is integrated into a full-chip design, these errors reappear in the full chip DRC results. With no effective way to identify these errors, chip designers must waste time debugging waived and false errors, and repeating the waiver communication process with the foundry. This paper will examine current methods used to eliminate waived errors at the chip level and describe a new automatable method for identifying and removing waived errors from DRC results. This new method enables chip designers to eliminate debug time previously spent on these errors, as well as time spent renegotiating waivers with the foundry. Automated waiver management not only helps designers achieve accurate DRC results in a timely and efficient manner, but also reduces time to market by eliminating unnecessary cycles from the verification flow.