Insulated Gate Bipolar Transistors (IGBTs) have been the buzz in industry for a couple of years. Thousands of Watts dissipating through centimeter small surface areas, switching large electrical devices, such as MRI machines or E-Cars sounds like every design engineer's nightmare. But as the devices evolve, so do the engineers, tools and methods. One of these evolved methods comes from combining T3ster and FloTHERM. Or, in other words, measure, simulate and optimize. Sounds simple, right? It is... to some extent. Using T3Ster® it is possible to obtain the temperature directly from the junction of a semiconductor, giving the advantage of not having to extrapolate data from external thermocouples.